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An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
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17. 理论动态| 坚持稳中求进、提质增效努力实现“十五五”良好开局————理论学习, www.ccdi.gov.cn/llxx/202602…